May 16, 2017 (Peabody, Mass.) -- Since 1967, JEOL has been the industry leader in Electron Beam Lithography design and manufacturing. Now the company enters its 51st year in this field with the introduction of a new high throughput spot beam direct write system, the JBX-8100FS.
This new generation of e-beam introduces the capability of writing ultrafine patterns at a high rate of speed directly onto substrates with minimum idle time during the exposure process. Maximum scanning speed has been increased to 125 MHz (the world’s highest level) for high speed writing applications.
The JBX-8100FS features two exposure modes to support a range of patterning options, from ultra fine processing to faster throughput for small-to-mid-size production. The tool allows rapid development of integrated circuit patterns for prototypes or high volume manufacturing.
Direct write electron beam lithography can be used to quickly write integrated circuit patterns with feature sizes guaranteed less than 10 nm onto a variety of substrate materials, and for superior pattern stitching of +/- 9nm or less in high throughput mode, or +/-20nm or less in high throughput mode. The high-precision stage accommodates substrates ranging from 200 mm diameter wafers down to small pieces.
The new system's small, compact footprint and low power consumption reduce cost of ownership. All JEOL e-beam systems are supported by the company's dedicated service engineers.
Birck Nanotechnology Center, Purdue University, to be first US installation
JEOL USA will install the first JBX-8100FS in North America at the Birck Nanotechnology Center, Purdue University, under the direction of Ali Shakouri and Dimitrios Peroulis. The interdisciplinary research center provides infrastructure for 160 affiliated faculty members and their research groups. The 186,000 sq ft. facility includes a 25,000 sq. ft. ISO Class 3-4-5 (Class 1-10-100) nanofabrication cleanroom.
Learn more about the new JBX-8100FS.