JBX-8100FS Electron Beam Lithography System

High Throughput Direct Write System

Representing 50 years of expertise in electron beam lithography, the all-new JEOL JBX-8100FS series spot beam lithography system is designed for higher throughput and lower operating costs.

The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput.

This new, high precision compact e-beam tool is suitable for a wide range of applications from research to production, while its small footprint and low power consumption reduce cost of ownership.

Main Features

  • Small footprint
    The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.
  • Low power consumption
    Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.
  • High throughput
    The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.
  • Version
    The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.
  • New Functions
    An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.
  • Laser positioning resolution
    Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.
  • System control
    Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.

Notice:

Linux® is a registered trademark or trademark of Linus Torvalds in Japan and other countries.
Windows is a registered trademarks or trademark of Microsoft Corporation in the US and other countries.

Contact Us

  • Contact your local Sales Representative to schedule an in-person or virtual demo now
    (USA, Canada, Mexico, Brazil)

Main Specifications

Writing Method Spot beam, vector scan, step and repeat
Accelerating Voltage 100 kV (200kV, 130kV, 50 kV, 25 kV optional)
Scanning speed Max 125 MHz
Field size 100 μm × 100 μm (high resolution mode)
1,000 μm × 1,000 μm (high throughput mode)
Stage movement 190 mm × 170 mm
Minimum step for stage movement 0.6 nm (0.15 nm optional)
Overlay accuracy ±9 nm or less (high resolution mode)
±20 nm or less (high throughput mode)
Field stitching accuracy ±9 nm or less (high resolution mode)
±20 nm or less (high throughput mode)
Sample size Wafers up to 200 mmφ, masks up to 6 inch, and micro sample pieces of any size

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  • Contact your local Sales Representative to schedule a
    virtual demo now (USA, Canada, Mexico, Brazil)
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