JBX-A9 Series Electron Beam Lithography System

Basic Configuration
Basic Unit
10 Cassettes Auto Loading System
Control Program with CPU System
Additional License for Data Preparation Program
Remote Control OL Aperture

Options
in-situ Optical Microscope
FOUP Wafer Auto Loading System
Open Cassette 200 mm Wafer Auto Loading System
48kV High Voltage Program
Custom Cassettes
SECS/GEM
Air Conditioner
EMI cancellation system

Item	Specification
Accelerating Voltage	100 kV
Maximum Field Size	1000 μm
Minimum Increment	0.25 nm
Stitching Accuracy	±9 nm
Overlay Accuracy	±9 nm
Minimum Line width	≦8 nm
Beam Current	50 pA to 400 nA
Maximum Scanning Speed	200 MHz
Stage Positioning Resolution	0.15 nm
Automatic Aberration Corrections	Dynamic Focus Dynamic stigmatism Deflection Distortion Correction
Maximum Sample Size	300 Wafer 9 inch Mask
Power Consumption	5 kVA
Footprint	7.4 m × 5.3 m × 2.7 m (H)

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EPMA Mass Spec TEM
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