Electron Optic Documents

Electron Backscatter Diffraction (EBSD) is a powerful technique capable of characterizing extremely fine grained microstructures in a Scanning Electron Microscope (SEM). Electron Backscatter Patterns (EBSPs) are generated near the sample surface, typically from a depth in the range 10 – 50nm. In order to achieve effective analysis it is imperative to combine high beam current with small probe size to achieve high spatial resolution in a time efficient manner.

Utilizing Monte Carlo Modeling of electron trajectories Electron Flight Simulator is a software tool designed to make your job easier. It can help you understand difficult samples, show the best way to run an analysis, and help explain results to others. With it you can see how the electron beam penetrates your sample, and where the X-ray signal comes from, for a wide variety of microscope conditions. You can model multiple layers, particles, defects, inclusions, and cross-sections. Any sample chemistry can be modeled.

JEOL’s in column Upper Electron Detector (Through The Lens Detector) provides not only ultra-high resolution imaging but also includes a user selectable energy filter allowing the user to study a sample under different contrast mechanisms. For example, this energy filter allows the user to select low energy secondary electrons (SE) to enhance topographic features or high energy backscatter electrons (BSE) to highlight atomic number contrast. This detector is especially useful at lower kVs.

In the last decade there has been a quantum leap in the ability of scanning electron microscopes to observe a variety of materials and biological specimens with ultrahigh resolution and exceptional surface detail, in particular employing low voltage SEM. Low voltage imaging has become a key technique for charge control and reduction, especially in the cases where no surface modification (for example conductive coating) can be employed to alleviate specimen charging during SEM observation.

One of the main imaging artifacts generated during specimen observation in SEM is specimen charging. The effect of charging manifests itself either via ‘flattening’ of the image due to the beam deflection close to the source of charging, or extremely high or low contrast and image distortion. This artifact can be substantially reduced by either application of conductive coating to the sample or by lowering the primary beam voltage. Contemporary FE-SEMs have the ability to produce nm size spot sizes even at 1kV and below, paving the way for high resolution imaging and analysis of nanomaterials and surfaces without the need for conductive coating.

Graphene is a crystalline form of carbon defined as a hexagonal arrangement of carbon atoms in a one-atom thick planar sheet. Graphene has outstanding properties (mainly mechanical strength, optical transparency and excellent electrical and heat conductivity) that make it an attractive material for electronics applications. Traditionally, graphene structures have been imaged with aberration-corrected TEM, AFM, or STM.

JEOL SEMs are delivered with the capability for remote viewing and remote operation. The SEM computer includes a 2nd ethernet card for connection to your local area network. There is no need for a second support computer. Just connect your JEOL SEM computer to a reliable and fast broadband internet connection and choose the software platform that meets your remote access requirements.

JSM-IT700HR Product Brochure

JSM-IT800HL Brochure

JEOL’s large chamber SEMs are designed for easy access in both the Tungsten SEM and Thermal Schottky Field Emission SEM models. Our large, direct-access sample chambers are ideal suited for the labs that require high-throughput and multi-sample imaging and analysis, multiple ports to fit a variety of accessories, and analysis of large samples that cannot be cut to size.