Novel high-yield trilayer resist process for 0.1 µm T-gate fabrication
By utilizing a novel ZEP/PMGI/ZEP trilayer resist process, GaInAs/AlInAs T-gate modulation-doped field effect transistors on InP with 0.1 µm gate lengths have been demonstrated. The trilayer resist requires only a single exposure. An overhang structure for liftoff, with a 0.1 µm footprint, is created by a sequence of infinitely selective developments for each layer. Linewidths as narrow as 65 nm have been obtained.