We offer the widest range of e-beam tools for mask, reticle, and direct-write lithography, from high volume production to advanced research and development of NIL, photonic crystals, and sub-10 nanometer linewidths. Whether your applications are for next generation and beyond, production of ultra-high accuracy reticles and FET devices, ASIC fabrication, or direct pattern lithography on wafers, JEOL has a solution. We also offer a range of Field Emission SEMs that are expandable for simple lithography and research applications.
Available Models:
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Emitter
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Accelerating Voltage
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Min. Beam Size
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Wafer Size
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Beam Shape
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Deflection
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JBX-3050MV
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LaB
6 single crystal
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50 kV
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Substrate Size:
6 inch mask
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Variable shaped
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Vector scan
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JBX-8100FS
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ZrO/W (Schottky)
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100 kV / 50 kV / 25 kV
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<2nm
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Up to 200mm wafer
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Spot
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Vector scan
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JBX-A9
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ZrO/W (Schottky)
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100 kV / 50 kV
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4nm (100 kV)
7nm (50 kV)
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Up to 300mm wafer
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Spot
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Vector scan
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